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Sapphire Wafers

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Diameter (mm)
50.8
76.2
100
125
150
200
300

Orientation
C-Plane (0001)
A-Plane (11-20)
R-Plane (1-102)
M-Plane (10-10)

Thickness

min ≥
max ≤

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8 hits 

Part-No.
Diameter
Diamater tol.
Size
Purity
Orientation
Thickness

(µm)
Thickness tol.
Frontside
Backside
RA
Flats
Notch
Lasermark
TTV
(<µm)
Bow
(<µm)
Qty
Remarks
AC32040
50,8
0,25
/
99.998 %
C-Plane (0001) 1° OFF tow. A-Plane ±0.2°
350
20
Epi-polished (Ra<=0.3 nm)
Epi-polished (Ra<=0.3 nm)
/
1 primary Flat. SEMI-Std.
/
None
10
10
14
/
AC32044
50,8
0,3
/
>99.99 %
C-Plane (0001) 0.25° OFF tow. A-Plane ±0.1°
430
25
Epi-polished (Ra<=0.3 nm)
As Lapped (Ra<1.2 µm)
/
1 Primary Flat. SEMI-Std.
/
Backside
10
10
25
/
AC34038
100
0,3
/
99.998 %
C-Plane (0001) ON ±0.2°
381
20
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1. SEMI Std.
/
/
10
10
49
/
AZ34041
100
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
650
25
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1 Primary Flat
/
None
10
15
92
/
AZ34038
100
0,1
/
99.998 %
C-Plane (0001) ON ±0.3°
650
25
Polished (Ra<=0.3 nm)
As Lapped (Ra<1.2 µm)
/
1 Primary Flat
/
None
10
15
100
/
AC33006
76,2
0,3
/
99.998 %
C-Plane (0001) ±0.3°
500
20
Epi-ready Polished (Ra<=0.3 nm)
Epi-ready Polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
None
10
10
120
/
AZ32001
50,8
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
430
20
Polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
/
10
15
185
/
AC32034
50,8
0,1
/
99.998 %
C-Plane (0001) ON ±0.1°
430
10
Epi-ready polished (Ra<=0.3 nm)
Epi-ready polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
/
10
10
225
/

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